4-33 product description ordering information typical applications features functional block diagram rf micro devices, inc. 7628 thorndike road greensboro, nc 27409, usa tel (336) 664 1233 fax (336) 664 0454 http://www.rfmd.com optimum technology matching? applied si bjt gaas mesfet gaas hbt si bi-cmos sige hbt si cmos ingap/hbt gan hemt sige bi-cmos 13 2 4 rf out rf in gnd gnd marking - n4 NBB-400 cascadable broadband gaas mmic amplifier dc to 8ghz ? narrow and broadband commercial and military radio designs ? linear and saturated amplifiers ? gain stage or driver amplifiers for mwradio/optical designs (ptp/pmp/ lmds/unii/vsat/wlan/cellular/dwdm) the NBB-400 cascadable broadband ingap/gaas mmic amplifier is a low-cost, high-performance solution for gen- eral purpose rf and microwave amplification needs. this 50 ? gain block is based on a reliable hbt proprietary mmic design, providing unsurpassed performance for small-signal applications. designed with an external bias resistor, the NBB-400 provides flexibility and stability. the NBB-400 is packaged in a low-cost, surface-mount ceramic package, providing ease of assembly for high- volume tape-and-reel requir ements. it is available in either packaged or chip (NBB-400-d) form, where its gold metallization is ideal for hybrid circuit designs. ? reliable, low-cost hbt design ? 15.5db gain, +15.0dbm p1db@2ghz ? high p1db of +14.6dbm@6.0ghz ? single power supply operation ?50 ? i/o matched for high freq. use NBB-400 cascadable broadband gaas mmic amplifier dc to 8ghz NBB-400-t1 or -t3tape & reel, 1000 or 3000 pieces (respectively) NBB-400-d NBB-400 chip form (100 pieces minimum order) NBB-400-e fully assembled evaluation board nbb-x-k1 extended frequency ingap amp designer?s tool kit 0 rev a5 031106 units: inches (mm) n4 0.070 (1.78) 0.040 (1.02) 0.020 0.200 sq. (5.08) 45 0.055 (1.40) 0.005 (0.13) package style: micro-x, 4-pin, ceramic 9
4-34 NBB-400 rev a5 031106 absolute maximum ratings parameter rating unit rf input power +20 dbm power dissipation 300 mw device current 70 ma channel temperature 200 c operating temperature -45 to +85 c storage temperature -65 to +150 c exceeding any one or a combination of these limits may cause permanent damage. parameter specification unit condition min. typ. max. overall v d =+3.9v, i cc =47ma, z 0 =50 ? , t a =+25c small signal power gain, s21 15.5 16.7 db f=0.1ghz to 1.0ghz 16.5 db f=1.0ghz to 4.0ghz 16.0 db f=4.0ghz to 6.0ghz 12.5 13.5 db f=6.0ghz to 8.0ghz gain flatness, gf 0.8 db f=0.1ghz to 5.0ghz input and output vswr 1.45:1 f=0.1ghz to 4.0ghz 1.30:1 f=4.0ghz to 6.0ghz 1.90:1 f=6.0ghz to 12.0ghz bandwidth, bw 7.5 ghz bw3 (3db) output power @ -1db compression, p1db 13.0 dbm f=2.0ghz 14.6 dbm f=6.0ghz 13.5 dbm f=9.0ghz noise figure, nf 4.3 db f=3.0ghz third order intercept, ip3 +28.1 dbm f=2.0ghz reverse isolation, s12 -17.5 db f=0.1ghz to 12.0ghz device voltage, v d 3.6 3.9 4.2 v gain temperature coefficient, g t / t -0.0015 db/c mttf versus temperature @ i cc =50ma case temperature 85 c junction temperature 131 c mttf >1,000,000 hours thermal resistance jc 251 c/w j t t case ? v d i cc ? -------------------------- - jc cwatt ? () = caution! esd sensitive device. rf micro devices believes the furnished information is correct and accurate at the time of this printing. however, rf micro devices reserves the right to make changes to its products without notice. rf micro devices does not assume responsibility for the use of the described product(s).
4-35 NBB-400 rev a5 031106 pin function description interface schematic 1rf in rf input pin. this pin is not internally dc blocked. a dc blocking capacitor, suitable for the frequency of operation, should be used in most applications. dc coupling of the input is not allowed, because this will override the internal feedback loop and cause temperature instabil- ity. 2gnd ground connection. for best performance, keep traces physically short and connect immediately to ground plane. 3rf out rf output and bias pin. biasing is accomplished with an external series resistor and chok e inductor to v cc . the resistor is selected to set the dc current into this pin to a desired level. the resistor value is deter- mined by the following equation: care should also be taken in the resistor selection to ensure that the current into the part never exceeds maximum datasheet operating cur- rent over the planned operating temperature. this means that a resistor between the supply and this pin is always required, even if a supply near 5.0v is available, to provide dc feedback to prevent thermal run- away. because dc is present on this pin, a dc blocking capacitor, suit- able for the frequency of operation, should be used in most applications. the supply side of the bias network should also be well bypassed. 4gnd same as pin 2. r v cc v device ? () i cc ------------------------------------------- = rf out rf in
4-36 NBB-400 rev a5 031106 typical bias configuration application notes related to biasing circuit, device footprint, and thermal considerations are available on request. recommended bias resistor values supply voltage, v cc (v)5 8 10121520 bias resistor, r cc ( ? ) 22 81 122 162 222 322 c block 1 3 4 2 v device c block in out l choke (optional) r cc v cc v d = 3.9 v
4-37 NBB-400 rev a5 031106 chip outline draw ing - NBB-400-d chip dimensions: 0.017? x 0.017? x 0.004? sales criteria - unpackaged die die sales information ? all segmented die are sold 100% dc-tested. testing parameters for wafer-level sales of die material shall be nego- tiated on a case-by-case basis. ? segmented die are selected for customer shipment in accordance with rfmd document #6000152 - die product final visual inspection criteria 1 . ? segmented die has a minimum sales volume of 100 pieces per order. a maximum of 400 die per carrier is allow- able. die packaging ? all die are packaged in gelpak esd protective containers with the following specification: o.d.=2"x2", capacity=400 die (20x20 segments), retention level=high(x8). ? gelpak esd protective containers are placed in a static shield bag. rfmd recommends that once the bag is opened the gelpak/s should be stored in a controlled nitrogen environment. do not press on the cover of a closed gelpak, handle by the edges only. do not vacuum seal bags containing gelpak containers. ? precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit 2 . package storage ? unit packages should be kept in a dry nitrogen environment for optimal assembly, perf ormance, and reliability. ? precaution must be taken to minimize vibration of packaging during handling, as die can shift during transit 2 . die handling ? proper esd precautions must be taken when handling die material. ? die should be handled using vacuum pick-up equipment, or handled along the long side with a sharp pair of twee- zers. do not touch die with any part of the body. ? when using automated pick-up and placement equipment, ensu re that force impact is set correctly. excessive force may damage gaas devices. input output gnd via 0.017 0.001 (0.44 0.03) 0.017 0.001 (0.44 0.03) 0.004 0.001 (0.10 0.03) units: inches (mm) back of chip is ground.
4-38 NBB-400 rev a5 031106 die attach ? the die attach process mechanically attaches the die to the circuit substrate. in addition, the utilization of proper die attach processes electrically connect the ground to the tr ace on which the chip is mounted. it also establishes the thermal path by which heat can leave the chip. ? die should be mounted to a clean, flat surface. epoxy or eutectic die attach are both acceptable attachment meth- ods. top and bottom metallizat ion are gold. conductive silver-filled epoxies are re commended. this procedure involves the use of epoxy to form a jo int between the backside gold of the chip and the metalliz ed area of the sub- strate. ? all connections should be made on the topside of the die. it is essential to performance that the backside be well grounded and that the length of topside interconnects be minimized. ? some die utilize vias for effective ground ing. care must be exerci sed when mounting die to preclude excess run-out on the topside. die wire bonding ? electrical connections to the chip are made through wire bonds. either wedge or ball bonding methods are accept- able practices for wire bonding. ? all bond wires should be made as short as possible. notes 1 rfmd document #6000152 - die product final visual inspection criteria. this document provides guidance for die inspection personnel to determine final visual acceptance of die product prior to shipping to customers. 2 rfmd takes precautions to ensure that die product is shipped in accordance with quality standards established to min- imize material shift. however, due to the physical size of die-level product, rfmd does not guarantee that material will not shift during transit, especially under extreme handling circumstances. product replacement due to material shift will be at the discretion of rfmd.
4-39 NBB-400 rev a5 031106 extended frequency ingap ampl ifier designer?s tool kit nbb-x-k1 this tool kit was created to assist in the design-in of the rfmd nbb- and nlb-series ingap hbt gain block amplifiers. each tool kit contains the following. ? 5 each nbb-300, nbb-310 and NBB-400 ceramic micro-x amplifiers ? 5 each nlb-300, nlb-310 and nlb-400 plastic micro-x amplifiers ? 2 broadband evaluation boards and high frequency sma connectors ? broadband bias instructions and specification summary index for ease of operation
4-40 NBB-400 rev a5 031106 tape and reel dimensions all dimensions in millimeters flange b t f 330 +0.25/-4.0 18.4 max 12.4 +2.0 diameter thickness space between flange 13.0 +0.079/-0.158 0.724 max 0.488 +0.08 hub o s a 102.0 ref 13.0 +0.5/-0.2 1.5 min outer diameter spindle hole diameter key slit width d 20.2 min key slit diameter 4.0 ref 0.512 +0.020/-0.008 0.059 min 0.795 min 330 mm (13") reel micro-x, mpga symbol size (mm) items size (inches) b a d o s f t lead 1 user direction of feed ao = 7.0 mm a1 = 1.45 mm bo = 7.0 mm b1 = 0.9 mm ko = 2.0 mm notes: 1. 10 sprocket hole pitch cumulative tolerance 0.2. 2. camber not to exceed 1 mm in 100 mm. 3. material: ps+c 4. ao and bo measured on a plane 0.3 mm above the bottom of the pocket. 5. ko measured from a plane on the inside bottom of the pocket to the surface of the carrier. 6. pocket position relative to sprocket hole measured as true position of pocket, not pocket hole. a a section a-a 8.0 ao a1 2.5 b1 bo 5.0 min. 2.00 0.05 see note 6 4.0 see note 1 r0.3 max. 0.30 0.05 all dimensions in mm 5.0 +0.1 -0.0 b1 12.0 0.3 5.50 0.05 see note 6 1.75 r0.3 typ. ko
4-41 NBB-400 rev a5 031106 device voltage versus amplifier current 3.70 3.75 3.80 3.85 3.90 3.95 4.00 35.00 40.00 45.00 50.00 55.00 60.00 amplifier current, i cc (ma) device voltage, v d (v) p1db versus frequency 0.0 5.0 10.0 15.0 20.0 1.03.05.07.09.0 frequency (ghz) p1db (dbm) p out /gain versus p in at 2 ghz -5.0 0.0 5.0 10.0 15.0 20.0 -13.0 -11.0 -9.0 -7.0 -5.0 -3.0 -1.0 1.0 p in (dbm) p out (dbm), gain (db) pout gain p out /gain versus p in at 6 ghz -5.0 0.0 5.0 10.0 15.0 20.0 -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 2.0 4.0 p in (dbm) p out (dbm), gain (db) pout gain third order intercept versus frequency 0.0 10.0 20.0 30.0 40.0 50.0 1.02.03.04.05.06.07.08.09.0 frequency (ghz) output ip3 (dbm)
4-42 NBB-400 rev a5 031106 note: the s-parameter gain results shown below include device performance as well as evaluation board and connector loss variations. the insertion losses of the evaluation board and connectors are as follows: 1ghz to 4ghz=-0.06db 5ghz to 9ghz=-0.22db 10ghz to 14ghz=-0.50db 15ghz to 20ghz=-1.08db s11 versus frequency, over temperature -40.0 -35.0 -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 frequency (ghz) s11 (db) +25 c -40 c +85 c s12 versus frequency, over temperature -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 frequency (ghz) s12 (db) +25 c -40 c +85 c s21 versus frequency, over temperature 0.0 5.0 10.0 15.0 20.0 25.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 frequency (ghz) s21 (db) +25 c -40 c +85 c s22 versus frequency, over temperature -30.0 -25.0 -20.0 -15.0 -10.0 -5.0 0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 frequency (ghz) s22 (db) +25 c -40 c +85 c
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